Dr. Oscar Ceballos Sanchez

139 Spicer points

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  • C in TiO2 powder synthetized by Molten Salt method

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    Files :

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    Information about the sample:

    • Shape: Powder

    • Sample material: TiO2_MS

    • Elements: Ti, O, C

    • Sample composition: TiO2

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    C 1s.fil.jpeg
  • C in ZnO films deposited by sputtering. Three components are observed which can be associated to C-C, C-O and C=O bonds.

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    Files :

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    Information about the sample:

    • Shape: Flat surface

    • Sample material: ZnO

    • Elements: Zn, C, O

    • Sample composition: ZnO

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    C 1s.fil.jpeg
  • C in ZnO films deposited by Sol-Gel Method

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    Files :

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    Information about the sample:

    • Shape: Flat surface

    • Sample material: ZnO

    • Elements: Zn, C, O

    • Sample composition: ZnO

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    C 1s_0.fil.jpeg
  • C in PbS film deposited by chemical bath deposition method

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    Files :

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    Information about the sample:

    • Shape: Flat surface

    • Sample material: PbS

    • Elements: Pb, S, O, C

    • Sample composition: PbS

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    C 1s.fil.jpeg
  • InGaAs deposited by MBE on GaAs substrate

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    Information about the sample:

    • Shape: Flat surface

    • Sample material: InGaAs

    • Elements: In

    • Sample composition: In0.2Ga0.8As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    Equipment and analysis software:

    • Brand: ?

    • Model: ?

    • Spectrometer mode: ?

    filesNAME.img
  • InGaAs substrate deposited by MBE technique.

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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs substrate

    • Elements: In, As, Ga

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    Equipment and analysis software:

    • Software used: Analyzer

    Some_image
  • Ga 3d in InGaAs substrate

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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: InGaAs substrate

    • Elements: In, Ga, As

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 85

    Some_image
  • Se 3d spectrum obtained from ZnSe film

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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: ZnSe film

    • Elements: Zn, Se

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 15

    • Take-off angle: 90

    Equipment and analysis software:

    • Software used: Analyzer