Post "Si2p etching during 1800s"

from: Dr. milton vazquez

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  • Si2p etching during 1800s (Si 2p forum)

    Growth in RTA @800°C by 290s, then etching, this data corresponds to the last etching at 1800s. ARXPS 0-65°

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    Information about the sample:

    • Shape: Flat Surface

    • Sample material: Si wafer

    • Elements: Si2p

    • Sample composition: SiOx

    Data acquisition parameters:

    • Photon source: Al Ka (monochromatic)

    • Pass energy: 20

    • Take-off angle: 0-65

    Equipment and analysis software:

    • Brand: SPECS

    • Model: Phoibos 150

    • Spectrometer mode: MediumArea:1.5kV

    • Software used: Analyzer

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Full name:

milton vazquez

Title:

Doctor

organization:

Universidad de Guadalajara

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Mexico

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