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Post "Oxygen in hafnium oxide obtained by ALD "

from: Engr. Dulce María Guzmán Bucio

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    Oxygen in hafnium oxide obtained by ALD (O 1s forum)

    O 1s spectra was obtained from the surface of a hafnium oxide sample that was deposited by atomic layer deposition over Si(1 0 0) wafers. The component at ~530 eV is associated to Hf-O bonding in hafnium oxide. The component at 532 eV has contributions from the oxygen of the superficial hydroxil groups and from the oxygen in hafnium silicate at the interface HfO2/Si.

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    Information about the sample:

    • Shape: Flat surface

    • Sample material: Hafnium oxide

    • Elements: Hf, O, Si

    • Sample composition: HfO2/HfSiO2/Si

    Data acquisition parameters:

    • Photon source: Al Ka monochromatic

    • Take-off angle: 85°

    Equipment and analysis software:

    • Brand: ThermoFisher

    • Model: Alpha 110

    • Spectrometer mode: large angle, small area

    O 1s 2.fil.jpeg

Full name:

Dulce María Guzmán Bucio

Title:

Engineer

organization:

Cinvestav

Country:

México

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